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| ON Semiconductort JFET - VHF/UHF Amplifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 3 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 1 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) 2 SOURCE 3 GATE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 -55 to +150 Unit mW mW/C C/W C 1 DRAIN DEVICE MARKING MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc) Gate Reverse Current (VGS = -15 Vdc, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ309 MMBFJ310 V(BR)GSS IGSS VGS(off) -25 - - -1.0 -2.0 - - - - - - -1.0 -1.0 -4.0 -6.5 Vdc nAdc Adc Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) MMBFJ309 MMBFJ310 IDSS VGS(f) 12 24 - - - - 30 60 1.0 mAdc Vdc SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 1. FR-5 = 1.0 0.75 0.062 in. |Yfs| |yos| Ciss Crss en 8.0 - - - - - - - - 10 18 250 5.0 2.5 - mmhos mhos pF pF nV Hz (c) Semiconductor Components Industries, LLC, 2001 1 November, 2001 - Rev. 2 Publication Order Number: MMBFJ309LT1/D MMBFJ309LT1 MMBFJ310LT1 IDSS, SATURATION DRAIN CURRENT (mA) 70 60 I D , DRAIN CURRENT (mA) 50 40 30 20 10 -5.0 VDS = 10 V IDSS +25C TA = -55C +25C 70 60 50 40 +150C +25C -55C +150C 0 30 20 10 0 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage Yfs , FORWARD TRANSCONDUCTANCE (mhos) 100 k Yfs 10 k Yfs 10 RDS 7.0 72 Cgs 4.0 48 24 0 0 120 96 R DS , ON RESISTANCE (OHMS) 1.0 k Yos, OUTPUT ADMITTANCE ( mhos) CAPACITANCE (pF) 100 1.0 k Yos VGS(off) = -2.3 V = VGS(off) = -5.7 V = 10 1.0 0 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 Cgd 100 0.01 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 2.0 1.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common-Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate-Source Voltage http://onsemi.com 2 MMBFJ309LT1 MMBFJ310LT1 30 24 18 12 6.0 0 100 VDS = 10 V ID = 10 mA TA = 25C 3.0 2.4 Y12 (mmhos) Y11 Y21 Y22 Y12 200 300 500 f, FREQUENCY (MHz) 700 1000 1.8 1.2 0.6 |S21|, |S11| 0.85 0.45 0.79 0.39 S21 0.73 0.33 0.67 0.27 0.61 0.21 S12 0.55 0.15 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 VDS = 10 V ID = 10 mA TA = 25C S11 0.012 0.92 0.036 0.96 0.024 0.94 S22 |S12|, |S22| 0.060 1.00 0.048 0.98 |Y11|, |Y21 |, |Y22 | (mmhos) Figure 4. Common-Gate Y Parameter Magnitude versus Frequency 21, 11 180 50 22 170 160 150 140 130 40 30 20 10 0 100 21 12, 22 -20 87 -20 -40 -60 -80 -100 12 11 VDS = 10 V ID = 10 mA TA = 25C 700 -120 -140 -160 -180 -200 1000 82 -120 83 -100 84 -80 85 -60 86 Figure 5. Common-Gate S Parameter Magnitude versus Frequency 11, 12 -20 120 -40 100 80 60 40 20 100 12 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) 21 11 21 21, 22 0 22 -20 -40 -60 -80 -100 1000 11 200 300 500 f, FREQUENCY (MHz) 700 Figure 6. Common-Gate Y Parameter Phase-Angle versus Frequency Figure 7. S Parameter Phase-Angle versus Frequency http://onsemi.com 3 MMBFJ309LT1 MMBFJ310LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 4 MMBFJ309LT1 MMBFJ310LT1 PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 2 BS V G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE http://onsemi.com 5 MMBFJ309LT1 MMBFJ310LT1 Notes http://onsemi.com 6 MMBFJ309LT1 MMBFJ310LT1 Notes http://onsemi.com 7 MMBFJ309LT1 MMBFJ310LT1 SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MMBFJ309LT1/D |
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